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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DF
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a low worst case dissipation. Designed to withstand VCES pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Storage time CONDITIONS VBE = 0 V TYP. 4.0 1.6 4.8 MAX. 1700 825 8 15 45 1.0 5.5 UNIT V V A A W V A V s
Ths 25 C IC = 4 A; IB = 1.33 A f = 16 kHz IF = 4.0 A ICsat = 4 A; f = 16 kHz
PINNING - SOT199
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
Rbe
case isolated
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1700 825 8 15 4 6 5 45 150 150 UNIT V V A A A A A W C C
Ths 25 C
ESD LIMITING VALUES
SYMBOL VC PARAMETER CONDITIONS MIN. MAX. 10 UNIT kV Electrostatic discharge capacitor voltage Human body model (250 pF, 1.5 k)
1 Turn-off current.
September 1997
1
Rev 1.400
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DF
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink compound with heatsink compound in free air TYP. 35 MAX. 3.7 2.8 UNIT K/W K/W K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ICES ICES BVEBO RBE VCEsat VBEsat VF hFE hFE PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C IB = 600 mA VEB = 7.5 V IC = 4 A; IB = 1.33 A IC = 4 A; IB = 1.33 A IF = 4 A IC = 1 A; VCE = 5 V IC = 4 A; VCE = 1 V
MIN. 7.5 0.83 3
TYP. 13.5 45 0.91 1.6 15 6
MAX. 1.0 2.0 1.0 1.00 7.3
UNIT mA mA V V V V
Emitter-base breakdown voltage Base-emitter resistance Collector-emitter saturation voltage Base-emitter saturation voltage Diode forward voltage DC current gain
DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (line deflection circuit 16 kHz) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICsat = 4 A; LC = 1 mH; CFB = 12.2 nF; VCC = 120 V; IB(end) = 0.8 A; LB = 6 H; -VBB = 4 V; -IBM = ICM/2 TYP. MAX. UNIT
4.8 0.4
5.5 0.52
s s
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.400
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DF
TRANSISTOR IC DIODE
ICsat
+ 150 v nominal adjust for ICsat
t
Lc
IB IBend t 20us 26us
D.U.T. IBend LB Cfb
Rbe
64us VCE
-VBB
t
Fig.1. Switching times waveforms.
Fig.3. Switching times test circuit.
ICsat 90 % IC
100
hFE VCE = 5 V
BU2708DF Ths = 25 C Ths = 85 C
10 % tf ts IB IBend
t
10
t
1 0.01
- IBM
0.1
1
10
IC / A
100
Fig.2. Switching times definitions.
Fig.4. DC current gain. hFE = f (IC) Parameter Ths (Low and high gain)
September 1997
3
Rev 1.400
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DF
100
hFE VCE = 1 V
BU2708DF
PTOT / W 10 IC = 3.5 A f = 16 kHz Tj = 85 C
BU2708AF/DF
Ths = 25 C Ths = 85 C
10
1 0.01
1
0.1
1
10
IC / A
100
0
0.5
1
1.5 IB / A
2
Fig.5. DC current gain. hFE = f (IC) Parameter Ths (Low and high gain)
Fig.8. Limit Ptot; Tj = 85C Ptot = f (IB(end)); IC = 3.5 A; f = 16 kHz
VCEsat / V 10 Tj = 85 C Tj = 25 C
BU2708DF
10
PTOT / W IC = 4 A f = 16 kHz Tj = 85 C
BU2708AF/DF
1 IC/IB = 8 IC/IB = 4 0.1
0.01 0.1
1
10
IC / A
100
1
0
0.5
1
1.5 IB / A
2
Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
Fig.9. Limit Ptot; Tj = 85C Ptot = f (IB(end)); IC = 4.0 A; f = 16 kHz
VBEsat / V 1.2 Tj = 85 C Tj = 25 C IC = 4A 1
BU2708DF
ts/tf / us 10
BU2708AF/DF
1.1
8
6
0.9
4
0.8 3A 0.7
IC = 4A
IC = 3.5A
2
0.6
0
0.5
1
1.5 IB / A
2
0
0
0.5
1
1.5
IB / A
2
Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
Fig.10. Limit storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 16 kHz
September 1997
4
Rev 1.400
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DF
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
with heatsink compound
VCC
LC
IBend
VCL LB T.U.T.
CFB
-VBB
0
20
40
60
80 Ths / C
100
120
140
Fig.11. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths)
Fig.13. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 4 V; LC = 1 mH; VCL = 1500 V; LB = 1 - 3 H; CFB = 1 - 4 nF; IB(end) = 0.8 - 4 A
Zth / K/W 10
BU2708AF/DF
16 14
0.5 0.2 0.1 0.05 0.02
tp T t
IC / A
BU2708AF/DF
1
12 10 8 6
P D tp
Area where Fails occur
0.1
0.01 D= 0 0.001
D=
4 2 0 100 VCE / V 1000 1700
T
1.0E-06
1E-04 tp / sec
1E-02
1E+00
Fig.12. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
Fig.14. Reverse bias safe operating area. Tj Tjmax
September 1997
5
Rev 1.400
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DF
MECHANICAL DATA
Dimensions in mm Net Mass: 5.5 g
15.3 max 0.7 7.3 3.1 3.3 6.2 5.8 21.5 max 3.2
5.2 max
o 45
seating plane
3.5
3.5 max not tinned
15.7 min 1 2.1 max 2 3 1.2 1.0
5.45
0.7 max 0.4 M 2.0
5.45
Fig.15. SOT199; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.400
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DF
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1997
7
Rev 1.400

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